mosfet 1.80 +0.1 -0.1 4.50 +0.1 -0.1 2.50 +0.1 -0.1 0.80 +0.1 -0.1 4.00 +0.1 -0.1 0.53 +0.1 -0.1 0.48 +0.1 -0.1 1.50 +0.1 -0.1 0.44 +0.1 -0.1 2.60 +0.1 -0.1 0.40 +0.1 -0.1 3.00 +0.1 -0.1 sot-89 unit: mm 1. base 2. collector 3. emiitter 1. source 2. drain 3. gate 1 2 3 1gate 2drain 3source 2SK2112 features low on-resistance r ds(on) =1.2 max.@v gs =4.0v,i d =0.5a high switching speed absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 100 v gate to source voltage v gss 20 v i d 1.0 a i dp 2.0 a power dissipation * p d 2.0 w channel temperature t ch 150 storage temperature t stg -55to+150 *16cm 2 x0.7mm,ceramic substrate used drain current electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =100v,v gs =0 1.0 a gate leakage current i gss v gs = 20v,v ds =0 10 a gate threshold voltage v gs(th) v ds =10v,i d =1ma 0.8 1.4 2.0 v forward transfer admittance y fs v ds =10v,i d =0.5a 0.4 s v gs =4.0v,i d =0.5a 0.58 1.2 v gs =10v,i d =0.5a 0.50 0.8 input capacitance c iss 170 pf output capacitance c oss 59 pf reverse transfer capacitance c rss 16 pf turn-on delay time t d(on) 2.9 ns rise time tr 1.7 ns turn-off delay time t d(off) 60 ns fall time tf 15 ns v ds =10v,v gs =0,f=1mhz i d =0.5a,v gs(on) =10v,r l =50 ,r g =10 ,v dd =25v drain to source on-state resistance r ds(on) marking marking nv 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type smd type smd type ic smd type smd type smd type product specification
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